RF Power Transistor Packages

Kyocera provides packages for RF power transistors, including silicon LDMOS-FET devices, GaAs FET/HEMT devices and wide-band-gap semiconductor FET/HEMT devices using GaN, SiC and other materials. Our low-electrical-resistance ceramic feedthroughs and low-thermal-resistance heat-sink materials are available for high-power devices.

RF: Radio Frequency
LDMOS: Laterally Diffused Metal Oxide Semiconductor
FET: Field Effect Transistor
HEMT: High Electron Mobility Transistor
GaAs: Gallium Arsenide; GaN: Gallium Nitride; SiC: Silicon Carbide