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Kyocera provides packages for silicon LDMOS (Laterally Diffused MOS) FET devices and also compound semiconductor (GaAs, GaN, SiC etc.) FET/HEMT devices. Our ceramic feedthroughs with low electrical resistance and heat sink materials with low thermal resistance are available for high power devices. |
 Low Electrical Resistance Ceramic (AO600) Feedthroughs |
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Electrical resistance of 2 kinds of ceramic feedthroughs were measured after temperature cycling:
-65oC (30 min.) / +175oC (30min.) |
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| Low Thermal Resistance Heat Sink (CM4) |
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Thermal resistance of 4 kinds of heat sink materials were measured.
(CM4 is a Kyocera material code.)
Heat Sink Size: 24mm x 17.4mm x 1.4mm
Heater Chip Size: 4mm x 1.5mm x 0.5mm |
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| Note: |
Thermal resistance can be smaller than these data by making thinner heat sink (CM4). However, thickness must be reviewed based on a use method and evaluation conditions. |
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FET: Field Effect Transistor
HEMT: High Electron Mobility Transistor
LDMOS: Laterally Diffused MOS |
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