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Products > Semiconductor Components > Components for Wireless Communication Devices > Thin-Film MIC Substrates 
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Thin-Film MIC Substrates



High-purity (99.6%) alumina substrate
  Kyocera’s Microwave Integrated Circuit (MIC) substrates feature thin-film circuit patterns on high-purity (99.6%) alumina or high dielectric constant ceramic material.

 High Dielectric Constant (High K) Substrates
High Dielectric Constant (High K) Substrate  
· Higher dielectric constant allows microwave circuits to be miniaturized
· High Q values are exhibited at high frequencies
· Circuit operation is stable due to low thermal coefficient of dielectric constant
· Thin-film resistor (Ta2N) material is available

Ceramic Material Codes SV380 SH890 K140
Dielectric Constant 38+/-1 89+/-1 140+/-2
Q Values >4000
(@10GHz)
>1800
(@2.6GHz)
>1000
(@5GHz)
Thermal Coefficient of Dielectric Constant (ppm/K) 20 to 60oC -30+/-30 -35+/-30 900+/-200
Coefficient of Thermal Expansion (ppm/K) 40 to 400oC 10.3 10.1 10.8
Note: Material properties listed above are typical values. Values may change upon further improvement or modification of materials and processes.

 Thin-Film Resistors
Resistor Material Ta2N
Sheet Resistance (Ω/SQ) 10 to 100
Thermal Coefficient of Resistance (ppm/K) -25 to 85oC -100+/-20
Tolerance without Trimming +/-20%
Tolerance with Trimming +/-3%
Long-Term Reliability:
Resistance Change after High-Temperature Storage
(125oC, 1000 hours)
0.4% max.

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