Ceramic Packages

RF Power Transistor Packages

Kyocera provides packages for RF power transistors, including silicon LDMOS-FET devices, GaAs FET/HEMT devices and wide-band-gap semiconductor FET/HEMT devices using GaN, SiC and other materials. Our low-electrical-resistance ceramic feedthroughs and low-thermal-resistance heat-sink materials are available for high-power devices.

RF: Radio Frequency
LDMOS: Laterally Diffused Metal Oxide Semiconductor
FET: Field Effect Transistor
HEMT: High Electron Mobility Transistor
GaAs: Gallium Arsenide; GaN: Gallium Nitride; SiC: Silicon Carbide

Heat Sink Material Options

Coefficient of
Liner Thermal
Expansion
(ppm/K)
(RT-400℃)

Thermal
Conductivity
(W/mK)

Bulk
Density
(g/m3)

Hardness(Hv)

Tensil
strength
(MPa)

Young's Modulus
of Elasticity
(GPa)

O.F.H.C.
(Pure Copper)

19.0 391 8.9 80 206 117
CuW 10/90 (%) 7.0 175 16.8 300 882 313
15/85 (%) 7.8 185 16.3 280 843 294
20/80 (%) 8.8 200 15.6 260 784 265
25/75 (%) 9.5 230 14.8 240 686 225
CuMo 35/65 (%) 8.1 * 210 9.7 162 560 208
40/60 (%) 8.5 * 220 9.5 180 608 206
50/50 (%) 10.4 * 260 9.5 150 539 186
60/40 (%) 10.8 * 275 9.4 130 461 157
CPC (141) 7.8 * 200 9.5 N/A 380 160
CPC (232) 8.8 * 235 9.3 N/A 350 130
KYCM Cu/Mo/Cu 7.3-10.5 260-310
(Vertical
Direction)
8.9-9.2 N/A Approx.
324
N/A
CM360 15.5 360 N/A N/A N/A 130
Cu-Diamond 11.6 500 6-7 N/A N/A N/A

NOTE : Contents in this list are subject to change without notice. It is recommended to confirm the latest information at the time of usage. We may not be able to accept requests based on old list.
- KYCM and CM360 are Kyocera material codes.
- KYCM is a registered trademark of KYOCERA Corporation in Japan and China.
- (*) Value may change by rolling direction.

Top of page