Kyocera has developed new TO ceramic packages that have higher heat resistance, higher thermal conductivity, higher withstand voltage and higher current carrying capacity than conventional materials. Our products support the spread of next generation power semiconductors such as silicon carbide (SiC) which are key for energy conservation.
TO-254 PKG / TO-257 PKG
TF-TO254 PKG
TF-TO3P PKG
Package | TO-257 PKG | TO-254 PKG | TF-TO254 PKG | TF-TO3P PKG |
---|---|---|---|---|
Drawing No. | PGMR-A6142 | PGMR-A6140 | GMR-A9455-A | SGMR-B4385 |
Plating | Ni + Au | Ni + Au | Ni | Ni + Au |
Heat Sink | KYCM® (260W/mK) | KYCM® (260W/mK) | KYCM® (260W/mK) | Cu-W (175W/mK) |
Lead Material | Alloy 50 (Cu cored) | Alloy 50 (Cu cored) | Alloy 50 (Cu cored) | Cu |
Current Carrying Capacity | 15A max. | 20A max. | 20A max. | 50A max. |
Withstand Voltage (DC) | 1.0kV min. | 1.0kV min. | 1.0kV min. | 1.2kV min. |
High Temperature Storage Test |
300°C 1,000 hours |
300°C 1,000 hours |
200°C 1,000 hours |
300°C 1,000 hours |
Temperature Cycling Test |
-65°C to +175°C 1,000 cycles |
-65°C to +175°C 1,000 cycles |
-65°C to +175°C 1,000 cycles |
-65°C to +175°C 1,000 cycles |
Courtesy of Osaka University (TF-TO254 PKG and TF-TO3P PKG)
Notes
Courtesy of Osaka University (TF-HB PKG)
TF-HB PKG