RF Power Transistor Packages

Kyocera provides packages for RF power transistors, including silicon LDMOS-FET devices, GaAs FET/HEMT devices and wide-band-gap semiconductor FET/HEMT devices using GaN, SiC and other materials. Our low-electrical-resistance ceramic feedthroughs and low-thermal-resistance heat-sink materials are available for high-power devices.

RF: Radio Frequency
LDMOS: Laterally Diffused Metal Oxide Semiconductor
FET: Field Effect Transistor
HEMT: High Electron Mobility Transistor
GaAs: Gallium Arsenide; GaN: Gallium Nitride; SiC: Silicon Carbide

Standard Products (56KB)

Heat Sink Material Options

		Coefficient of Liner Thermal Expansion(ppm/K) (RT-400℃)	Thermal Conductivity (W/mK)	Bulk Density(g/m³)	Hardness(Hv)	Tensil strength(MPa)	Young's Modulus of Elasticity(GPa)
O.F.H.C. (Pure Copper)		19.0	391	8.9	80	206	117
CuW	10/90 (%)	7.0	175	16.8	300	882	313
	15/85 (%)	7.8	185	16.3	280	843	294
	20/80 (%)	8.8	200	15.6	260	784	265
	25/75 (%)	9.5	230	14.8	240	686	225
CuMo	35/65 (%)	8.1 *	210	9.7	162	560	208
	40/60 (%)	8.5 *	220	9.5	180	608	206
	50/50 (%)	10.4 *	260	9.5	150	539	186
	60/40 (%)	10.8 *	275	9.4	130	461	157
CPC (141)		7.8 *	200	9.5	N/A	380	160
CPC (232)		8.8 *	235	9.3	N/A	350	130
KYCM	Cu/Mo/Cu	7.3-10.5	260-310 (Vertical Direction)	8.9-9.2	N/A	Approx. 324	N/A
CM360		15.5	360	N/A	N/A	N/A	130

NOTE : Contents in this list are subject to change without notice. It is recommended to confirm the latest information at the time of usage. We may not be able to accept requests based on old list.
- KYCM and CM360 are Kyocera material codes.
- KYCM is a registered trademark of KYOCERA Corporation in Japan and China.
- (*) Value may change by rolling direction.

Organic Packages