Heat Dissipation Structure Ceramic Substrates

SiC (Silicon Carbide) Polishing Plates

Less deformation through lower thermal distribution. Stronger chemical resistance. A range of surface profiles are available.

Polishing plate features minimal deformation due to high thermal conductivity, low thermal expansion coefficient, high stiffness and excellent thermal uniformity. It also features excellent chemical resistance and various surface profile options including concave, flat or convex.

Property

High Stiffness Low Thermal Expansion High Thermal Conductivity Chemical Resistance Thermal Uniformity

Product specs

Material
Silicon Carbide
Shape
Convex, flat and concave available.
Size
MAXφ30"
Precision
Flatness: 1μm or less

Applications

  • Wafer Polishing

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