Glossary of electronic components
[Diode] Maximum average forward current of commercial frequency (50Hz/60Hz) sin wave under condition.
[Thyristor] Maximum average on-state current of commercial frequency (50Hz/60Hz) half sin wave under specified condition.
A two-terminal semiconductor device which conducts current in one direction, i.e. from anode to cathode, also called a rectifier.
Abbreviation of Electromagnetic Compatibility. The concept of enabling electronic devices to function without EMI.
Abbreviation of Electromagnetic Interference. A disturbance of an electrical circuit caused by external interference of an electromagnetic origin.
Abbreviation of Electromagnetic Susceptibility. The vulnerability of an electric circuit to a disturbance of electromagnetic origin.
Minimum gate current required to turn on.
Minimum gate voltage required to turn on.
Abbreviation of Insulated Gate Bipolar Transistor. A type of three-terminal power semiconductor device, with an insulated gate which controls the current flowing through the device. An IGBT features the voltage-driven characteristics of MOSFETs in addition to the high-current capability of bipolar transistors.
Abbreviation of metal-oxide-semiconductor field-effect transistor. A type of field-effect transistor (FET) with an insulated gate that controls current flowing through a device.
[MOSFET] Range of channel temperature while operating.
[Diode / Thyristor] Range of junction temperature while operating.
Peak forward voltage at specified forward current.
Peak reverse current at specified reverse voltage
Maximum allowable power dissipation at 25˚C.
A soldering method in which solder is applied to electronic components and then melted in a reflow oven to permanently mount them to a printed circuit board (PCB).
Allowable peak off-state voltage repetitively applicable between anode and cathode.
[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.
Abbreviation of Surface Mount Device. Components suitable for SMT equipment.
Maximum allowable current into source terminal.
Voltage between source and drain terminals at specified source current with gate short-circuited to source.
DC resistance between drain and source at specified gate voltage and drain current.
Range of ambient temperature while not operating.
Non-repetitive maximum peak forward current in one cycle of 50Hz sin wave.
Non-repetitive maximum peak on-state current in one cycle of 50Hz sin wave.
Allowable peak reverse voltage non-repetitively applicable to diode.
Temperature difference per watt between two points, such as junction and ambient, or junction and case after thermal balance is established Rth(j-c): junction to case, Rth(j-l): junction to lead, Rth(j-a): junction to ambient.
A type of three-terminal power semiconductor device that conducts high current when the gate receives a current trigger.
A semiconductor device used to amplify or control current.