Electronic Components & Devices

Glossary of electronic components



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A


Anode

An electrode through which a current flows into a polarized electrical device.

Average rectified output current (Io)

[Diode] Maximum average forward current of commercial frequency (50Hz/60Hz) sin wave under condition.
[Thyristor] Maximum average on-state current of commercial frequency (50Hz/60Hz) half sin wave under specified condition.


C


Cathode

An electrode from which a current leaves a polarized electrical device.


D


Diode

A two-terminal semiconductor device which conducts current in one direction, i.e. from anode to cathode, also called a rectifier.

DIP

A method of mounting components on a printed circuit board (PCB) by inserting component leads to be soldered into through-holes of a PCB and dipping it into a solder bath to mount the components.


E

EMC

Abbreviation of Electromagnetic Compatibility. The concept of enabling electronic devices to function without EMI.

EMI

Abbreviation of Electromagnetic Interference. A disturbance of an electrical circuit caused by external interference of an electromagnetic origin.

EMS

Abbreviation of Electromagnetic Susceptibility. The vulnerability of an electric circuit to a disturbance of electromagnetic origin.


G

Gate trigger current(IGT

Minimum gate current required to turn on.

Gate trigger voltage

Minimum gate voltage required to turn on.


I

IGBT

Abbreviation of Insulated Gate Bipolar Transistor. A type of three-terminal power semiconductor device, with an insulated gate which controls the current flowing through the device. An IGBT features the voltage-driven characteristics of MOSFETs in addition to the high-current capability of bipolar transistors.
IGBT modules


M

MOSFET

Abbreviation of metal-oxide-semiconductor field-effect transistor. A type of field-effect transistor (FET) with an insulated gate that controls current flowing through a device.
MOSFET modules


O

Operating channel Temperature Range(Tjw

[MOSFET] Range of channel temperature while operating.

Operating Junction Temperature Range(Tjw

[Diode / Thyristor] Range of junction temperature while operating.


P

Peak Forward Voltage(VFM

Peak forward voltage at specified forward current.

Peak reverse current(IRM

Peak reverse current at specified reverse voltage

Power dissipation(PD

Maximum allowable power dissipation at 25˚C.


R

Reflow Soldering

A soldering method in which solder is applied to electronic components and then melted in a reflow oven to permanently mount them to a printed circuit board (PCB).

Repetitive Peak Off-state Voltage(VDRM

Allowable peak off-state voltage repetitively applicable between anode and cathode.

Repetitive Peak Reverse Voltage(VRRM

[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.

Reverse Recovery Time(Trr

[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.


S

SMD

Abbreviation of Surface Mount Device. Components suitable for SMT equipment.

SMT

Abbreviation of Surface Mount Technology. A method of producing electronic circuits on a printed circuit board (PCB) by applying solder paste and placing components on the PCB's surface before the solder is melted in a reflow oven.

Source Current(IS

Maximum allowable current into source terminal.

Source-Drain Voltage(VSD

Voltage between source and drain terminals at specified source current with gate short-circuited to source.

Static Drain-Source On-resistance(RDS

DC resistance between drain and source at specified gate voltage and drain current.

Storage Temperature Range(Tstg

Range of ambient temperature while not operating.

Surge forward current(IFSM

Non-repetitive maximum peak forward current in one cycle of 50Hz sin wave.

Surge on-state current(ITSM

Non-repetitive maximum peak on-state current in one cycle of 50Hz sin wave.

Surge Peak Reverse Voltage(VRSM

Allowable peak reverse voltage non-repetitively applicable to diode.


T

Thermal Resistance(Rth

Temperature difference per watt between two points, such as junction and ambient, or junction and case after thermal balance is established Rth(j-c): junction to case, Rth(j-l): junction to lead, Rth(j-a): junction to ambient.

Thyristor

A type of three-terminal power semiconductor device that conducts high current when the gate receives a current trigger.
Thyristors modules

Transistor

A semiconductor device used to amplify or control current.

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