Electronic Components & Devices

Glossary of electronic components

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An electrode through which a current flows into a polarized electrical device.

Average rectified output current (Io)

[Diode] Maximum average forward current of commercial frequency (50Hz/60Hz) sin wave under condition.
[Thyristor] Maximum average on-state current of commercial frequency (50Hz/60Hz) half sin wave under specified condition.



An electrode from which a current leaves a polarized electrical device.



A two-terminal semiconductor device which conducts current in one direction, i.e. from anode to cathode, also called a rectifier.


A method of mounting components on a printed circuit board (PCB) by inserting component leads to be soldered into through-holes of a PCB and dipping it into a solder bath to mount the components.



Abbreviation of Electromagnetic Compatibility. The concept of enabling electronic devices to function without EMI.


Abbreviation of Electromagnetic Interference. A disturbance of an electrical circuit caused by external interference of an electromagnetic origin.


Abbreviation of Electromagnetic Susceptibility. The vulnerability of an electric circuit to a disturbance of electromagnetic origin.


Gate trigger current(IGT

Minimum gate current required to turn on.

Gate trigger voltage

Minimum gate voltage required to turn on.



Abbreviation of Insulated Gate Bipolar Transistor. A type of three-terminal power semiconductor device, with an insulated gate which controls the current flowing through the device. An IGBT features the voltage-driven characteristics of MOSFETs in addition to the high-current capability of bipolar transistors.
IGBT modules



Abbreviation of metal-oxide-semiconductor field-effect transistor. A type of field-effect transistor (FET) with an insulated gate that controls current flowing through a device.
MOSFET modules


Operating channel Temperature Range(Tjw

[MOSFET] Range of channel temperature while operating.

Operating Junction Temperature Range(Tjw

[Diode / Thyristor] Range of junction temperature while operating.


Peak Forward Voltage(VFM

Peak forward voltage at specified forward current.

Peak reverse current(IRM

Peak reverse current at specified reverse voltage

Power dissipation(PD

Maximum allowable power dissipation at 25˚C.


Reflow Soldering

A soldering method in which solder is applied to electronic components and then melted in a reflow oven to permanently mount them to a printed circuit board (PCB).

Repetitive Peak Off-state Voltage(VDRM

Allowable peak off-state voltage repetitively applicable between anode and cathode.

Repetitive Peak Reverse Voltage(VRRM

[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.

Reverse Recovery Time(Trr

[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.



Abbreviation of Surface Mount Device. Components suitable for SMT equipment.


Abbreviation of Surface Mount Technology. A method of producing electronic circuits on a printed circuit board (PCB) by applying solder paste and placing components on the PCB's surface before the solder is melted in a reflow oven.

Source Current(IS

Maximum allowable current into source terminal.

Source-Drain Voltage(VSD

Voltage between source and drain terminals at specified source current with gate short-circuited to source.

Static Drain-Source On-resistance(RDS

DC resistance between drain and source at specified gate voltage and drain current.

Storage Temperature Range(Tstg

Range of ambient temperature while not operating.

Surge forward current(IFSM

Non-repetitive maximum peak forward current in one cycle of 50Hz sin wave.

Surge on-state current(ITSM

Non-repetitive maximum peak on-state current in one cycle of 50Hz sin wave.

Surge Peak Reverse Voltage(VRSM

Allowable peak reverse voltage non-repetitively applicable to diode.


Thermal Resistance(Rth

Temperature difference per watt between two points, such as junction and ambient, or junction and case after thermal balance is established Rth(j-c): junction to case, Rth(j-l): junction to lead, Rth(j-a): junction to ambient.


A type of three-terminal power semiconductor device that conducts high current when the gate receives a current trigger.
Thyristors modules


A semiconductor device used to amplify or control current.

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