Glossary of electronic components
[Diode] Maximum average forward current of commercial frequency (50Hz/60Hz) sin wave under condition.
[Thyristor] Maximum average on-state current of commercial frequency (50Hz/60Hz) half sin wave under specified condition.
A two-terminal semiconductor device which conducts current in one direction, i.e. from anode to cathode, also called a rectifier.
A semiconductor with a single function. For example, diodes and transistors.
Abbreviation of Electromagnetic Compatibility. The concept of enabling electronic devices to function without EMI.
Abbreviation of Electromagnetic Interference. A disturbance of an electrical circuit caused by external interference of an electromagnetic origin.
Abbreviation of Electromagnetic Susceptibility. The vulnerability of an electric circuit to a disturbance of electromagnetic origin.
Minimum gate current required to turn on.
Minimum gate voltage required to turn on.
Abbreviation of Insulated Gate Bipolar Transistor. A type of three-terminal power semiconductor device, with an insulated gate which controls the current flowing through the device. An IGBT features the voltage-driven characteristics of MOSFETs in addition to the high-current capability of bipolar transistors.
[Diode / Thyristor] Range of junction temperature while operating.
Peak forward voltage at specified forward current.
Peak reverse current at specified reverse voltage
A soldering method in which solder is applied to electronic components and then melted in a reflow oven to permanently mount them to a printed circuit board (PCB).
Allowable peak off-state voltage repetitively applicable between anode and cathode.
[Diode]Allowable peak reverse voltage repetitively applicable to diode.
[Thyristor]Allowable peak reverse voltage repetitively applicable between anode and cathode.
Abbreviation of Surface Mount Device. Components suitable for SMT equipment.
Range of ambient temperature while not operating.
Non-repetitive maximum peak forward current in one cycle of 50Hz sin wave.
Non-repetitive maximum peak on-state current in one cycle of 50Hz sin wave.
Allowable peak reverse voltage non-repetitively applicable to diode.
Temperature difference per watt between two points, such as junction and ambient, or junction and case after thermal balance is established Rth(j-c): junction to case, Rth(j-l): junction to lead, Rth(j-a): junction to ambient.
A type of three-terminal power semiconductor device that conducts high current when the gate receives a current trigger.
A semiconductor device used to amplify or control current.