Sapphire Products for Semiconductor Processing Equipment

Kyocera’s sapphire material is used in semiconductor processing equipment to enhance system performance.

Sapphire, made from 99.99% high-purity alumina (Al2O3), exhibits strong plasma and thermal resistance, which helps to reduce particle generation. It is used in such semiconductor processing equipment areas as chamber components, end effectors, windows, wafer carriers and fixtures.

The low dissipation factor of sapphire also contributes to the improved performance of plasma generators.

Kyocera’s sapphire material is used in semiconductor processing equipment to enhance system performance.

Sapphire, made from 99.99% high-purity Al2O3 and having excellent plasma and thermal resistance, works to reduce particle generation and is used in key locations of semiconductor processing tools such as chamber components, end effectors, windows, wafer carriers and fixtures.

Material:		Single Crystal Sapphire
Properties:		・ ・ ・	Plasma Resistance Heat Resistance (above 2,000°C) Chemical Resistance
Advantage:		・	Long-Life: Maintains clear transparency longer than other materials in the same 　　 application (low maintenance cost)
Plasma Resistance Test Result 　Sapphire maintains clear transparency, while quartz is eroded by plasma (as shown in photo).

Applications
Sapphire Window	Sapphire Window + Metallization (Mo-Mn)	Sapphire Window + Metal Flange
Chamber Window	Sapphire + Glass / Quartz Lamination

Kyocera’s sapphire material is used in semiconductor processing equipment to enhance system performance.

Sapphire is proven as an ideal material for plasma generator tubes due to its strong resistance to erosion from chemicals and plasma. The low dissipation factor of sapphire also enhances the performance of microwave guide tubes.

■Sapphire – Dissipation Factor vs. Frequency*

*Reference data based on Kyocera AFM analysis