 Higher-frequency wavelength utilization has become an indispensable solution for crowded wireless frequency traffic resulting from advances in computer and mobile communications technologies. As demand for higher-performance RF and power devices increases (based on GaN or SiC instead of Si or GaAs), the advantages of epitaxial growth of sapphire wafers are garnering more attention for use in devices such as automotive inverters, power amplifiers for cell phone base stations, RF switching modules, fire alarms and UV sensors.
| Properties: |
|
Excellent Thermal Stability
Chemical Stability
Good Mechanical Strength |
| Capabilities: |
|
Manufacturing Capacity
Designing Capability (including large sizes, orientation, axis, off-angle)
Precise Grinding / Polishing Capability |
| Specifications |
| ■ Orientation: |
|
C-, R-, A-, M-planes |
| ■ Sizes: |
|
up to 8” (for A- or R-planes)
up to 6” (for C-plane) |
| ■ Cleaning: Available for various epitaxial types |
Surface roughness and other specs are adjustable. |
Japan
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